Proceedings of The 2nd International Conference on Applied Research in Engineering Science and Technology
Dielectric Characteristics of Zn2(Sn1-xTix)O4 Ceramics at Microwave Frequency for Application in 5G Communication Components
In evaluating substrates for 5G communication components, three of their dielectric properties must be considered; optimized dielectric constant, high-quality factor, and temperature coefficient of a resonant frequency close to zero. A dielectric constant (r ) of 10.2, a quality factor (Qf) of 39,000 GHz, and a temperature coefficient of resonant frequency (f ) of -84.8 ppm/ OC were.obtained when Zn2SnO4 ceramics were sintered at 1225 OC for 4 h. The series of Zn2(Sn1-xTix)O4 microwave ceramics were investigated. Specimens were prepared by the conventional mixed-oxide method. The microwave dielectric characteristics of Zn2(Sn1-xTix)O4 ceramics are determined using X-ray diffraction (XRD) patterns, Rietveld refinement, and Raman spectra. As the degree of substitution of Ti4+ increases, the position of the A1g(O) Raman mode shifts toward a higher frequency. The Zn2(Sn0.97Ti0.03)O4 exhibits a minimum full width at half maximum (FWHM) for the A1g(O) Raman vibration mode. At x=0.03, a dielectric constant of 9.8, a quality factor (Qf ) of 47,200 GHz were achieved with a temperature coefficient at the resonant frequency (f ) of -93.1 ppm/OC. The dielectric constant of Zn2(Sn1-xTix)O4 ceramics depends on the relative density, ionic polarization, and the Raman shift for the A1g(O) mode. The quality factor for Zn2(Sn1-xTix)O4 ceramics are determined by the FWHM for the A1g(O) mode. Their moderate dielectric constant and high quality factor made them potentially very effective for use in 5G communication devices.
Keywords: Zn2(Sn1-xTix)O4; Microwave Dielectric Ceramic.